Chemical Mechanical Planarization的意思|示意
化学机械平面化
Chemical Mechanical Planarization的网络常见释义
化学机械抛光 CMP（展板形式） 化学机械抛光（Chemical Mechanical Planarization，CMP）是集成电路生产线中的核心工艺之一，技术难度仅次于光刻技术。
化学机械研磨 ...K为基础的应用，展示重点如下； 以VICTREX PEEK为基础的化学机械研磨环应用化学机械研磨（Chemical Mechanical Planarization，CMP）是半导体晶圆制造过程中的关键步骤，VICTREX PEEK拥有高纯度、耐磨耗性与耐化学性，符合并满足...
又称化学机械平坦化 化学机械抛光(Chemical mechanical polishing，简称CMP)，又称化学机械平坦化(Chemical mechanical planarization)，是提供超大规模集成电路(ULSI)制造过程中表面平坦化的一种新技术，于1965年首次由美国的Monsanto提出，最初是用于获取高质量的...
Chemical Mechanical Planarization相关短语
1、 Chemical Mechanical Planarization CMP 化学机械平坦化
2、 chemical-mechanical planarization 化学机械平坦化
3、 Chemical Mechanical Planarization slurry 械研磨液
Chemical Mechanical Planarization相关例句
The sacrificial layer is removed through an etching process such as chemical mechanical planarization.
该牺牲层是通过例如化学机械平面化的蚀刻工艺除去的。
The use of different barrier slurries for copper chemical mechanical planarization CMP creates a challenge for post-CMP cleaning.
铜化学机械平面化不同阻挡层浆料的应用引起了铜CMP后清洗的问题。
Chemical mechanical planarization (CMP) has gained wide acceptance within the semiconductor industry as the preferred method for controlling wafer topography.
化学机械抛光(CMP)在半导体工业内获得了广泛的赞同，对控制形貌起伏的硅片表面当作首选方法。
At the present time, chemical mechanical planarization (CMP) is the most effective technology for global and local planarization of the wafer in IC manufacturing.
目前，化学机械抛光技术(CMP)被认为是能够实现晶圆表面局部平坦化和全局平坦化的最佳方法。
The copper chemical-mechanical polishing (CMP) which is the key planarization technology for ULSI manufacturing was discussed.
对用于甚大规模集成电路(ULSI)制造的关键平坦化工艺———铜化学机械抛光(CMP)技术进行了讨论。