drain-gate的意思|示意
漏栅
drain-gate的网络常见释义
漏栅 drain-gate(漏栅), 此释义来源于网络辞典。
drain-gate相关短语
1、 drain-gate capacitance 漏栅电容
2、 drain gate bias circuit 漏栅偏置电路
3、 drain gate 排泄门 ; 泄水门
drain-gate相关例句
The output power and drain current increase as the gate voltage increases.
输出功率和漏电流增加的栅极电压的增加。
The floating gate is positioned between the source and drain regions.
浮动栅极定位于源极区与漏极区之间。
The drain current model is simplified by an average capacitance formula and a simple expression of channel average mobility with gate voltage.
采用一个随栅压变化的平均电容公式，并用一个简单的解析表达式来描述沟道平均迁移率随栅压的变化关系。
A semiconductor substrate is provided with a gate structure, and a source and drain on opposing sides of the gate structure.
提供具有栅结构、和具有在所述栅结构相对两侧的源和漏的半导体衬底。
A source region and a drain region are formed in the fin at the opposite sides of the gate electrode.
源区和漏区形成在鳍部内栅极的相对侧处。
Source and drain regions in the semiconductor may define a transistor gate length.
在半导体中的源极区和漏极区可以限定晶体管栅极长度。