insulated gate bipolar transistor的意思|示意
绝缘栅双极型晶体管
insulated gate bipolar transistor的网络常见释义
绝缘栅双极型晶体管 技术介绍绝缘栅双极型晶体管(Insulated Gate Bipolar Transistor，简称IGBT)是电磁炉的重要组成部分。然而，由于绝缘栅双极型晶体管是一个大功率的功率管，在电磁炉上电的瞬间，若IGBT得到错误的驱...
晶体管 ...ductor)并联 电容及二极管而成(也可利用开关自身的寄生电容与二极管)，或绝缘栅 双极晶体管(Insulated Gate Bipolar Transistor)并联电容及二极管而成 (也可利用开关自身的寄生电容与二极管)，除上述的元件外也可为用其 它的开辟元件来取代，即在每个切换周期...
insulated gate bipolar transistor相关短语
1、 IGBT-Insulated Gate Bipolar Transistor 绝缘栅双极型功率管 ; 晶体管
2、 Lateral Insulated-gate Bipolar Transistor 横向绝缘栅双极晶体管
3、 insulated gate bipolar transistor IGBT 功率模块
insulated gate bipolar transistor相关例句
The high speed insulated gate bipolar transistor (IGBT) transport model is derived by ambipolar transport theory in this paper.
借助双极传输理论导出了高速绝缘栅双极晶体管(IGBT)传输特性的物理模型。
Provided is an insulated gate bipolar transistor (IGBT) which occupies a small area and in which a thermal breakdown is suppressed.
本发明提供一种绝缘栅双极晶体管(IGBT)，所述绝缘栅双极晶体管占据小面积并且抑制热击穿。
The reason of appearing peak voltage in IGBT(insulated gate bipolar transistor)absorber is discussed. Absorbers corrcsponding to different powers are proposed for the 3rd generation IGBT.
探讨了IGBT功率电路尖峰电压产生的原因，并针对第三代IGBT，给出了适应不同功率的吸收电路。
A new network model for the complementary lateral insulated-gate bipolar transistor CLIGBT is presented in this paper.
本文提出互补横向绝缘栅双极晶体管CLIGBT的一种网络模型。
The paper expounds MOS system power element's characters, insulated gate bipolar transistor and integration type power element's technology and its applications.
本文阐述了MOS系列功率器件的特性、绝缘栅双极型晶体管和集成型功率器件技术，以及它们的应用。
The system adopted insulated gate bipolar transistor (IGBT) as its main circuit and pulse-width modulating (PWM) technology.
该系统采用IGBT（绝缘栅双极型晶体管）器件，PWM（脉宽调制）控制技术。