Chemical Mechanical Polishing的意思|示意
n.化学机械平坦化
Chemical Mechanical Polishing的网络常见释义
化学机械抛光 ...：在电子制造行业,随着产品性能的不断提高,对表面质量的要求越来越高。抛光是表面平整化加工的重要手段。与现有的抛光技术相比,化学机械抛光(Chemical mechanical polishing,简称CMP)是目前广泛采用的并且是几乎唯一的全局平面化技术。
化学机械研磨 目前，化学机械研磨(Chemical Mechanical Polishing, CMP)是达成全局平坦化的最佳方法，尤其是在半导体制作工艺进入亚微米领域后，化学机械研磨已成为一项不可或缺的制作工艺技术。
技术 化学机械抛光技术（Chemical Mechanical Polishing,CMP）是目前最好的、也是唯一全局平面化技术，是超大规模集成电路成功的最为关键的技术。
研磨 2 中文摘要 化学 机械 研磨 ( Chemical Mechanical Polishing ) 是目 化学 研磨 search engine, 化学 研磨 Search, Free 化学 研磨 Ebook, PDF, TXT, DOC, TXT, PPT downloads..
Chemical Mechanical Polishing相关短语
1、 chemical mechanical polishing CMP 化学机械抛光
2、 chemical-mechanical polishing machine 化学机械抛光机
3、 chemical mechanical polishing cmp technology 化学机械抛光技术
Chemical Mechanical Polishing相关例句
Typical chemical mechanical polishing (CMP) of copper layers on semiconductor devices involves using a hard pad in the first step and a soft pad for the barrier layer removal step.
半导体器件上铜层化学机械抛光(CMP)的第一道工序一般需要使用一块硬抛光垫，在磨去阻挡层的工序中要用到软垫。
Polishing pad is a very important component of the chemical-mechanical polishing (CMP) system.
抛光垫是化学机械抛光(CMP)系统的重要组成部分。
Polishing pad conditioning is very important for chemical mechanical polishing to improve the performances of a pad.
抛光垫修整是化学机械抛光的重要过程之一。
In this paper mechanical polishing; Chemical polishing and hydrogen reduction methods used im cleaning bearing steel surface for oxygen determination have been studied.
本文研究了用机械抛光、化学抛光和氢还原法处理轴承钢表面对测定氧的影响。
The mechanism of W-CMP was analyzed, the slurry makes a dual function of chemical erosion and mechanical lapping, has an important influence on the polishing rate.
分析了W - CMP的机理，抛光液对W材料表面具有化学腐蚀和机械研磨的双重作用，对抛光速率有着重要的影响。
Chemical-Mechanical % polish (CMP) - a process of flattening and polishing wafers that utilizes both chemical removal and mechanical buffing. It is used during the fabrication process.
化学-机械抛光(CMP) -平整和抛光晶圆片的工艺，采用化学移除和机械抛光两种方式。此工艺在前道工艺中使用。