chemical mechanical polishing CMP的意思|示意
化学机械抛光CMP
chemical mechanical polishing CMP的网络常见释义
化学机械抛光 【正文快照】： 化学机械抛光(Chemical Mechanical Polishing CMP),其开发历史可以追溯到第一次世界大战[1],美国和加拿大率先使用氧化铈,用于高射炮瞄准镜等军用设备的抛光。
chemical mechanical polishing CMP相关短语
1、 chemical mechanical polishing cmp technology 化学机械抛光技术
2、 chemical-mechanical polishing cmp 化学机械抛光
3、 the chemical mechanical polishing cmp 化学机械抛光
chemical mechanical polishing CMP相关例句
We have to face some Cu line issues after we use Cu to replace AL, such as the reliability with Cu and low K dielectric, and post-CMP (Chemical Mechanical Polishing) Cu line voids defect.
在引入电镀铜工艺的同时我们也不得不面对一些铜线工艺所特有的缺陷，如铜线和低K值介电质可靠性问题，以及电镀铜后产生的孔洞缺陷等问题。
Single stage re-circulation filtrations were performed to remove oversized particles from colloidal silica based Chemical-Mechanical Polishing (CMP) slurry.
单步循环过滤，用来去除胶体硅基化学机械抛光(CMP)磨料中尺寸过大的微粒。
The mechanism of W-CMP was analyzed, the slurry makes a dual function of chemical erosion and mechanical lapping, has an important influence on the polishing rate.
分析了W - CMP的机理，抛光液对W材料表面具有化学腐蚀和机械研磨的双重作用，对抛光速率有着重要的影响。
Chemical-Mechanical % polish (CMP) - a process of flattening and polishing wafers that utilizes both chemical removal and mechanical buffing. It is used during the fabrication process.
化学-机械抛光(CMP) -平整和抛光晶圆片的工艺，采用化学移除和机械抛光两种方式。此工艺在前道工艺中使用。
The copper chemical-mechanical polishing (CMP) which is the key planarization technology for ULSI manufacturing was discussed.
对用于甚大规模集成电路(ULSI)制造的关键平坦化工艺———铜化学机械抛光(CMP)技术进行了讨论。
Polishing pad is a very important component of the chemical-mechanical polishing (CMP) system.
抛光垫是化学机械抛光(CMP)系统的重要组成部分。